Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection

Patent metadata

Field	Value
Publication number	US-8993445-B2
Application number	US-201313740343-A
Country	US
Kind code	B2
Filing date	Jan 14, 2013
Priority date	Jan 14, 2013
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

Methods are provided for facilitating fabricating a semiconductor device by selectively etching a gate structure sidewall(s) to facilitate subsequent sidewall spacer isolation. The method includes, for instance: providing a gate structure with a protective layer(s) over the gate structure, the gate structure including one or more sidewalls; selectively removing a portion of the gate structure along at least one sidewall to partially undercut the protective layer(s); and forming a sidewall spacer(s) over the sidewall(s) of the gate structure, with a portion of the sidewall spacer at least partially filling the partial undercut of the protective layer(s), and residing below the protective layer(s). In certain embodiments, the selectively removing includes implanting the sidewall(s) with a dopant to produce a doped region(s) of the gate structure, and subsequently, at least partially removing the doped region(s) of the gate structure selective to an undoped region of the gate structure.

First claim

What is claimed is:

1. A method comprising:
facilitating fabricating a semiconductor device, the facilitating fabricating comprising:
providing a gate structure over at least one fin with at least one layer over the gate structure, the gate structure comprising at least one sidewall;
implanting the at least one sidewall with a dopant to form at least one doped region of the gate structure along the at least one sidewall;
selectively removing at least a portion of the at least…

Assignees

• Globalfoundries Inc
• Globalfoundries Inc

Inventors

• Choi Dae-Han
• Yang Dae Geun
• Maeng Chang Ho
• Hwang Wontae

Classifications

• H10D30/62

  Electricity · mapped topic

• H10D30/024

  Electricity · mapped topic

• H10D64/017

  Electricity · mapped topic

• H10D64/01 Primary

  Electricity · mapped topic

• H01L29/401 Primary

  Electricity · mapped topic