Method of manufacturing a semiconductor device with processes carried out without atmospheric exposure

Patent metadata

Field	Value
Publication number	US-8993440-B2
Application number	US-201313948327-A
Country	US
Kind code	B2
Filing date	Jul 23, 2013
Priority date	Jun 4, 2009
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A method of manufacturing a semiconductor device according to an embodiment, includes forming a wiring in a surface of a first insulating film on a semiconductor substrate, exposing the first insulating film in whose surface the wiring is formed to a plasma containing a rare gas so as to form a densified layer on the surface of the first insulating film, removing an oxide film formed on the wiring, after the densified layer is formed and forming a second insulating film on the wiring from which the oxide film is removed and on the densified layer, wherein the processes from the removal of the oxide film to the formation of the second insulating film are carried out without being atmospherically-exposed.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a wiring within a first insulating film on a semiconductor substrate;
exposing the first insulating film to a first plasma containing a rare gas inside a processing chamber so as to form a densified layer on an upper surface of the first insulating film;
removing an oxide film formed on the wiring, after the densified layer is formed;
forming a second insulating film on the wiring fr…

Assignees

• Toshiba Kk

Inventors

• Masuda Hideaki
• Watanabe Kei
• Ootsuka Kenichi

Classifications

• H10P14/69433

  Electricity · mapped topic

• H10P14/6336

  Electricity · mapped topic

• H10P95/00

  Electricity · mapped topic

• H10P70/277 Primary

  Electricity · mapped topic

• H10P14/6905

  Electricity · mapped topic