Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
US-2024234132-A1 · Jul 11, 2024 · US
Low-k Cu barriers in damascene interconnect structures
US8993435B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993435-B2 |
| Application number | US-72422910-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2010 |
| Priority date | Mar 15, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO 2 ). The precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming an interconnect structure, the method comprising: forming a metal feature in a dielectric layer; and forming an etch stop layer (ESL) directly over the metal feature and the dielectric layer, wherein the ESL is a single layer comprising oxygen doped (silicon) carbide (ODC), and wherein the ESL is formed using precursors comprising: a precursor selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS),…
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- H10P14/6922Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8993435B2 cover?
- In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO 2 ). The precursor is selected from the group consisting essentially of 1-methylsilane (1M…
- Who is the assignee on this patent?
- Wang Kuan-Chen, Shih Po-Cheng, Ko Chung-Chi, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/6922. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).