Tunneling field effect transistor (TFET) formed by asymmetric ion implantation and method of making same

Patent metadata

Field	Value
Publication number	US-8993425-B2
Application number	US-201213718992-A
Country	US
Kind code	B2
Filing date	Dec 18, 2012
Priority date	Dec 18, 2012
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

An embodiment integrated circuit device and a method of making the same. The embodiment method includes forming a first nitride layer over a gate stack supported by a substrate, implanting germanium ions in the first nitride layer in a direction forming an acute angle with a top surface of the substrate, etching away germanium-implanted portions of the first nitride layer to form a first asymmetric nitride spacer confined to a first side of the gate stack, the first asymmetric nitride spacer protecting a first source/drain region of the substrate from a first ion implantation, and implanting ions in a second source/drain region of the substrate on a second side of the gate stack unprotected by the first asymmetric nitride spacer to form a first source/drain.

First claim

What is claimed is:

1. A method of forming an integrated circuit, comprising:
forming a first nitride layer over a gate stack supported by a substrate;
implanting germanium ions in the first nitride layer in a direction forming an acute angle with a top surface of the substrate;
etching away germanium-implanted portions of the first nitride layer to form a first asymmetric nitride spacer confined to a first side of the gate stack, the first asymmetric nitride spacer protecting…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Zhang Ying

Classifications

• H10P30/40

  Electricity · mapped topic

• H10P50/287

  Electricity · mapped topic

• H10P30/22 Primary

  Electricity · mapped topic

• H10D12/211 Primary

  Electricity · mapped topic

• Y10S438/918

  Cross-Sectional Technologies · mapped topic