Capacitor and method for fabricating the same

US8993396B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8993396-B2
Application numberUS-201213596007-A
CountryUS
Kind codeB2
Filing dateAug 27, 2012
Priority dateMay 8, 2012
Publication dateMar 31, 2015
Grant dateMar 31, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer; forming cylinder type lower electrodes in the open parts; forming a first upper electrode over an entire surface of a structure including the cylinder type lower electrodes to fill the cylinder type lower electrodes; defining a through hole that passes through portions of the first upper electrode and the support layer; removing the mold layer through the through hole and exposing the cylinder type lower electrodes; forming a second upper electrode to fill the through hole and spaces between the cylinder type lower electrodes; and forming a third upper electrode to connect the second upper electrode and the first upper electrode with each other.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for fabricating a capacitor, comprising: forming a plurality of cylinder type lower electrodes; forming a first upper electrode inside the cylinder type lower electrodes; forming a second upper electrode outside the cylinder type lower electrodes after the forming of the first upper electrode; and forming a third upper electrode that connects the first upper electrode and the second upper electrode. 2. The method of clai…

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What does patent US8993396B2 cover?
A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer; forming cylinder type lower electrodes in the open parts; forming a first upper electrode over an entire surface of a structure including the cylinder type lower electrodes to fill the cylinder type l…
Who is the assignee on this patent?
Park Jong-Kook, Cho Yong-Tae, Sk Hynix Inc
What technology area does this patent fall under?
Primary CPC classification H10D1/042. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).