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US-2024023326-A1 · Jan 18, 2024 · US
Multiple silicide integration structure and method
US8993393B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993393-B2 |
| Application number | US-70429610-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 11, 2010 |
| Priority date | Feb 11, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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A structure and method for providing a multiple silicide integration is provided. An embodiment comprises forming a first transistor and a second transistor on a substrate. The first transistor is masked and a first silicide region is formed on the second transistor. The second transistor is then masked and a second silicide region is formed on the first transistor, thereby allowing for device specific silicide regions to be formed on the separate devices.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor device, the method comprising: providing a substrate with a first region and a second region; forming a first type of transistor in the first region, the first type of transistor comprising sidewalls along an outer edge of the first type of transistor; forming a second type of transistor different from the first type of transistor in the second region; forming a first protective layer over the first type of tr…
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Electricity · mapped topic
- H10D84/401Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8993393B2 cover?
- A structure and method for providing a multiple silicide integration is provided. An embodiment comprises forming a first transistor and a second transistor on a substrate. The first transistor is masked and a first silicide region is formed on the second transistor. The second transistor is then masked and a second silicide region is formed on the first transistor, thereby allowing for device …
- Who is the assignee on this patent?
- Yeh Der-Chyang, Hsia Hsing-Kuo, Lin Hao-Hsun, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10D84/401. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).