Bonding method and bonding apparatus
US-11931995-B2 · Mar 19, 2024 · US
Flexible semiconductor device, method for manufacturing the same, image display device using the same and method for manufacturing the image display device
US8993387B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993387-B2 |
| Application number | US-201213821352-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 21, 2012 |
| Priority date | Mar 24, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
Official abstract text for this publication.
There is provided a method for manufacturing a flexible semiconductor device. The method of the flexible semiconductor device according to the present invention comprises the steps of: (i) forming an insulating layer on one of principal surfaces of a metal foil; (ii) forming a semiconductor layer on the insulating layer, and then forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; (iii) forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; (iv) forming vias in the flexible film layer, and thereby a semiconductor device precursor is provided; and (v) subjecting the metal foil to a processing treatment, and thereby forming a gate electrode from the metal foil, wherein, in the step (v) of the processing treatment of the metal foil, the gate electrode is formed in a predetermined position by using at least one of the vias of the semiconductor device precursor as an alignment marker.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a flexible semiconductor device, comprising the steps of: (i) forming an insulating layer on one of principal surfaces of a metal foil; (ii) forming a semiconductor layer on the insulating layer, and then forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; (iii) forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8993387B2 cover?
- There is provided a method for manufacturing a flexible semiconductor device. The method of the flexible semiconductor device according to the present invention comprises the steps of: (i) forming an insulating layer on one of principal surfaces of a metal foil; (ii) forming a semiconductor layer on the insulating layer, and then forming source and drain electrodes so that the source and drain …
- Who is the assignee on this patent?
- Suzuki Takeshi, Hirano Koichi, Masuda Shinobu, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10P10/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).