Plasma processing method and plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-8993352-B2
Application number	US-201314080214-A
Country	US
Kind code	B2
Filing date	Nov 14, 2013
Priority date	Nov 16, 2012
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material are stacked in sequence, in a plasma processing apparatus including a processing chamber that partitions a processing space where plasma is generated and a gas supply unit that supplies a processing gas into the processing space. The plasma processing method includes a mask forming process of forming a mask on the second magnetic layer by etching the mask material; an etching process of supplying the processing gas into the processing chamber to generate plasma, etching the second magnetic layer by the mask, and stopping the etching on a surface of the insulating layer. Further, the second magnetic layer contains CoFeB, the insulating layer contains MgO, and the processing gas contains H 2 and F or a fluorine compound.

First claim

We claim:

1. A plasma processing method of etching a multilayered material that has a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material are stacked in sequence, in a plasma processing apparatus including a processing chamber that partitions a processing space where plasma is generated and a gas supply unit that supplies a processing gas into the processing space, the plasma processing method comprises:
a mask forming process of forming a mask on the second magnetic layer by etching the mask material;
an etching process of supplying the processing gas into the processing chamber to generate plasma; etching the second magnetic layer by using the mask; and stopping the etching on a surface of the insulating layer,
wherein the second magnetic layer contains CoFeB,
the insulating layer contains MgO, and
the processing gas contains H 2 and F or a fluorine compound.

2. The plasma processing method of claim 1 ,
wherein in the etching process, the second magnetic layer including a modified layer formed on a surface thereof is etched.

3. The plasma processing method of claim 2 ,
wherein the modified layer contains a metal element contained in the mask material.

4. The plasma processing method of claim 3 ,
wherein the metal element includes Ta.

5. The plasma processing method of claim 2 ,
wherein the etching process comprises:
a first etching process of supplying a first processing gas into the processing chamber to generate plasma; and etching the surface of the second magnetic layer including the modified layer;
a second etching process of supplying a second processing gas into the processing chamber to generate plasma; etching the second magnetic layer; and stopping the etching on the surface of the insulating layer; and
a third etching process of supplying a third processing gas into the processing chamber to generate plasma; and removing a residue generated in the second etching process,
wherein the first processing gas contains F or a fluorine compound, the second processing gas contains a gas having a halogen element, and the third processing gas contains H 2 .

6. The plasma processing method of claim 5 ,
wherein the first processing gas and the second processing gas are supplied into the processing chamber at the same time, and the first etching process and the second etching process are carried out at the same time.

7. The plasma processing method of claim 5 ,
wherein the second processing gas and the third processing gas are supplied into the processing chamber at the same time, and the second etching process and the third etching process are carried out at the same time.

8. The plasma processing method of claim 5 ,
wherein the third processing gas further contains at least one of N 2 , Ar, and He gases.

9. The plasma processing method of claim 5 ,
wherein the first processing gas and the second processing gas contain the same elements.

10. The plasma processing method of claim 1 , further comprising:
a coating process of coating a surface of the multilayered material with an insulating film after the etching process.

11. The plasma processing method of claim 10 , further comprising:
a fourth etching process of supplying a fourth processing gas into the processing chamber to generate plasma; and etching the insulating layer and the first magnetic layer after the coating process,
wherein the first magnetic layer contains CoFeB, and the fourth processing gas contains CH 4 .

12. The plasma processing method of claim 1 ,
wherein the plasma processing apparatus further includes a first electrode provided in the processing chamber, a second electrode provided to face the first electrode, a first power supply unit configured to apply a power having a first frequency to the first electrode, and a second power supply unit configured to apply a power having a second frequency to the second electrode, and
the second power supply unit applies a power having a frequency of about 1 MHz or less as the second frequency to the second electrode to generate plasma in the processing chamber.

13. The plasma processing method of claim 12 ,
wherein the second power supply unit applies a power having a frequency of about 400 kHz or less as the second frequency to the second electrode to generate plasma in the processing chamber.

14. The plasma processing method of claim 12 ,
wherein the first power supply unit applies a power of about 100 W to about 300 W to the first electrode to generate plasma in the processing chamber.

15. The plasma processing method of claim 1 ,
wherein the plasma processing apparatus further includes an exhaust unit configured to depressurize the processing space to a predetermined pressure level and a control unit configured to control the exhaust unit, and
the control unit controls the exhaust unit to allow a pressure in the processing space to be about 10 mTorr to about 30 mTorr.

16. The plasma processing method of claim 1 ,
wherein the processing space has a gap of about 20 mm to about 30 mm.

17. A plasma processing apparatus of etching a multilayered material having a stacked structure in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material are stacked in sequence, the plasma processing apparatus comprising:
a processing chamber configured to partition a processing space where plasma is generated;
a gas supply unit configured to supply a processing gas into the processing space; and
a control unit configured to control the gas supply unit,
wherein the control unit controls the gas supply unit such that a mask is formed on the second magnetic layer by etching the mask material, and such that the processing gas is supplied into the processing chamber to generate plasma, the second magnetic layer is etched by using the mask, and the etching is stopped on a surface of the insulating layer,
the second magnetic layer contains CoFeB,
the insulating layer contains MgO, and
the processing gas contains H 2 and F or a fluorine compound.

Assignees

• Tokyo Electron Ltd

Inventors

• Nishimura Eiichi
• Kotsugi Tadashi
• Sone Takashi

Classifications

• H01J37/32724

  Temperature · CPC title

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01L43/12 Primary

  Electricity · mapped topic

• H05H1/46 Primary

  using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title