Method for manufacturing piezoelectric transducer
US-2024090333-A1 · Mar 14, 2024 · US
Photo resist (PR) profile control
US8993218B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993218-B2 |
| Application number | US-201313771497-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 20, 2013 |
| Priority date | Feb 20, 2013 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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One or more techniques or systems for controlling a profile for photo resist (PR) are provided herein. In some embodiments, a first shield layer is formed on a first PR layer and a second PR layer is formed on the first shield layer. A first window is formed within the second PR layer during a first exposure with a mask. A second window is formed within the first shield layer based on the first window. A third window is formed within the first PR layer during a second exposure without a mask. Because, the third window is formed while the first shield layer and the second PR layer are on the first PR layer, a profile associated with the first PR layer is controlled. Contamination during ion bombardment is mitigated due to the controlled profile.
First claim
Opening claim text (preview).
What is claimed is: 1. A method, comprising: forming a first photo resist (PR) layer on a base material; forming a first shield layer on the first PR layer; forming a second PR layer on the first shield layer; forming a first window within the second PR layer; forming a second window within the first shield layer based on the first window within the second PR layer; and forming a third window within the first PR layer based on the second window within the second PR layer…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8993218B2 cover?
- One or more techniques or systems for controlling a profile for photo resist (PR) are provided herein. In some embodiments, a first shield layer is formed on a first PR layer and a second PR layer is formed on the first shield layer. A first window is formed within the second PR layer during a first exposure with a mask. A second window is formed within the first shield layer based on the first…
- Who is the assignee on this patent?
- Yang li huai, Chen Chien-Mao, Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification G03F7/0035. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).