Method of manufacturing EUV photo masks
US-12085843-B2 · Sep 10, 2024 · US
Reflective layer-equipped substrate for EUV lithography, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and process for production of the reflective layer-equipped substrate
US8993201B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993201-B2 |
| Application number | US-201213478532-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 23, 2012 |
| Priority date | Dec 9, 2009 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A reflective layer-equipped substrate for EUV lithography, comprising: a substrate; a reflective layer which reflects EUV light and is formed on the substrate; an intermediate layer formed on the reflective layer; and a protective layer which protects the reflective layer and is formed on the intermediate layer, wherein the reflective layer comprises a Mo/Si multilayer reflective film, the protective layer comprises a Ru layer or a Ru compound layer,…
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Physics · mapped topic
Operations & Transport · mapped topic
Physics · mapped topic
Physics · mapped topic
Operations & Transport · mapped topic
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- What does patent US8993201B2 cover?
- Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting…
- Who is the assignee on this patent?
- Mikami Masaki, Komakine Mitsuhiko, Ikuta Yoshiaki, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification G03F1/24. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).