Method and system for forming metal silicon oxide and metal silicon oxynitride layers
US-2023349043-A1 · Nov 2, 2023 · US
US8993058B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993058-B2 |
| Application number | US-201314010639-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 27, 2013 |
| Priority date | Aug 28, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.
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What is claimed is: 1. A method of processing a substrate comprising: depositing a silicon oxide layer on a substrate having a germanium or III-V semiconductor surface; depositing a tantalum oxide layer on the silicon oxide layer; and diffusing the tantalum oxide layer into the silicon oxide layer to provide a tantalum silicate layer having a Si/(Ta+Si) ratio in the range from about 0.01 to about 0.15. 2. The method of claim 1 , wherein diffusing the tan…
Electricity · mapped topic
Electricity · mapped topic
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