Interconnects having sealing structures to enable selective metal capping layers
US-2015097292-A1 · Apr 9, 2015 · US
Plasma enhanced deposition processes for controlled formation of metal oxide thin films
US11501965B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11501965-B2 |
| Application number | US-201815971601-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 4, 2018 |
| Priority date | May 5, 2017 |
| Publication date | Nov 15, 2022 |
| Grant date | Nov 15, 2022 |
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Abstract
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Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.
First claim
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What is claimed is: 1. A plasma enhanced atomic layer deposition (PEALD) process for selectively depositing a metal oxide on a first dielectric surface relative to a second metal or metal nitride surface of a substrate comprising: providing the substrate comprising the first dielectric surface and the second metal or metal nitride surface, wherein the first dielectric surface is a silicon oxide surface and the second metal or metal nitride surface is a Co, Ru, Ni, W, TiN, Cu or Ta…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US11501965B2 cover?
- Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxy…
- Who is the assignee on this patent?
- Asm Ip Holding Bv
- What technology area does this patent fall under?
- Primary CPC classification H10P14/6339. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 15 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).