Semiconductor device
US-2024363707-A1 · Oct 31, 2024 · US
US8991333B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8991333-B2 |
| Application number | US-201113292518-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 9, 2011 |
| Priority date | Dec 27, 2007 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Official abstract text for this publication.
A substrate processing method includes a first step of subjecting a target substrate to a gas process within an atmosphere containing a fluorine-containing process gas, thereby forming a fluorine-containing reaction product on a surface of the target substrate. The method further includes a second step of subjecting the target substrate treated by the gas process to a heating process and a gas process within an atmosphere containing a reactive gas that reacts with fluorine.
Opening claim text (preview).
What is claimed is: 1. A substrate processing system comprising: a first gas supply section configured to supply a fluorine-containing gas to a process object; a second gas supply section configured to supply a reactive gas that reacts with fluorine to the process object; and a control section configured to control operation of the system, wherein the control section includes a computer readable non-transitory storage medium that stores a control program for execution on a c…
Electricity · mapped topic
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