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US-2015380299-A1 · Dec 31, 2015 · US
Method and apparatus for ultraviolet (UV) patterning with reduced outgassing
US8988652B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8988652-B2 |
| Application number | US-201213654750-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 18, 2012 |
| Priority date | Oct 18, 2012 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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Abstract
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A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.
First claim
Opening claim text (preview).
What is claimed is: 1. An ultraviolet (UV) lithography apparatus comprising: a stage for receiving thereon a substrate to be patterned; an ultraviolet (UV) light source that directs UV light onto a substrate disposed on said stage; an open duct that circumferentially surrounds said stage; a gas delivery source that delivers an inert gas through said open duct and causes said inert gas to flow across and in close proximity to a surface of said substrate disposed on said stage…
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- G03F7/2002Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
- G03F7/70916Primary
Physics · mapped topic
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- What does patent US8988652B2 cover?
- A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lit…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G03F7/2002. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).