Nonvolatile memory device and method for manufacturing same
US-9224788-B2 · Dec 29, 2015 · US
Transition metal oxide bilayers
US8987697B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8987697-B2 |
| Application number | US-201414252285-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 14, 2014 |
| Priority date | Feb 7, 2012 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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Abstract
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Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
First claim
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What is claimed is: 1. A nonvolatile memory element comprising: a first layer operable as a first electrode; a second layer operable as a second electrode; a third layer between the first layer and the second layer; and a fourth layer between the first layer and the second layer; wherein the third layer has a linear resistance and a sub-stoichiometric composition; and wherein the fourth layer has a bistable resistance and a near-stoichiometric composition.…
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Electricity · mapped topic
- H01L45/146Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8987697B2 cover?
- Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the …
- Who is the assignee on this patent?
- Intermolecular Inc, Toshiba Kk, Sandisk 3D Llc, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01L45/146. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).