Efficient combinatorial optimization by quantum-inspired parallel annealing in analogue memristor crossbar
US-2024419761-A1 · Dec 19, 2024 · US
US8987693B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8987693-B2 |
| Application number | US-201213570390-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 9, 2012 |
| Priority date | Mar 23, 2010 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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A method of operating a memory device having a dielectric material layer, a transition metal oxide layer and a set of electrodes each formed over a substrate, includes applying a voltage across the set of electrodes producing an electric field across the transition metal oxide layer enabling the transition metal oxide layer to undergo a metal-insulation transition (MIT) to perform a read or write operation on memory device.
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What is claimed is: 1. A method of operating a memory device having a dielectric material layer, a transition metal oxide layer, a first electrodes disposed directly on top of and in contact with a substrate and a second electrode formed directly on top of and in contact with the dielectric material layer, comprising: applying a voltage across the set of electrodes producing an electric field across the transition metal oxide layer enabling the transition metal oxide layer to unde…
Electricity · mapped topic
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