Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
Method of depositing a film using a turntable apparatus
US8987147B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8987147-B2 |
| Application number | US-201314108663-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2013 |
| Priority date | Dec 21, 2012 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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Abstract
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A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of depositing a film of forming an oxide film containing a predetermined first element and a predetermined second element on a plurality of substrates using a film deposition apparatus including a turntable that is accommodated in a chamber, is rotatable, and includes mounting portions formed on an upper surface of the turntable so that the substrates are mounted on the mounting portions, a first process area laid out above the upper surface of th…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8987147B2 cover?
- A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns wh…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/69215. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).