Method for patterning a graphene layer and method for manufacturing a display substrate
US-2015357239-A1 · Dec 10, 2015 · US
Methods for single exposure—self-aligned double, triple, and quadruple patterning
US8980757B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980757-B2 |
| Application number | US-201113993659-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 15, 2011 |
| Priority date | Dec 15, 2011 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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Abstract
Official abstract text for this publication.
A method including forming a pattern on a surface of a substrate, the pattern including one of discrete structures including at least one sidewall defining an oblique angle relative to the surface and discrete structures complemented with a material layer therebetween, the material layer including a volume modified into distinct regions separated by at least one oblique angle relative to the surface; and defining circuit features on the substrate using the pattern, the features having a pitch less than a pitch of the pattern.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method comprising: forming a pattern on a surface of a substrate, the pattern comprising one of discrete structures comprising at least one sidewall defining an oblique angle relative to the surface and discrete structures complemented with a material layer therebetween, the material layer comprising a volume modified into distinct regions separated by at least one oblique angle relative to the surface; and defining circuit features on the substrat…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P76/202Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8980757B2 cover?
- A method including forming a pattern on a surface of a substrate, the pattern including one of discrete structures including at least one sidewall defining an oblique angle relative to the surface and discrete structures complemented with a material layer therebetween, the material layer including a volume modified into distinct regions separated by at least one oblique angle relative to the su…
- Who is the assignee on this patent?
- Cinnor Fitih M, Wallace Charles H, Intel Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P76/202. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).