Method of removing a photoresist from a low-k dielectric film

Patent metadata

Field	Value
Publication number	US-8980754-B2
Application number	US-201113187357-A
Country	US
Kind code	B2
Filing date	Jul 20, 2011
Priority date	Jul 20, 2011
Publication date	Mar 17, 2015
Grant date	Mar 17, 2015

Abstract

Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.

First claim

What is claimed is:

1. A method of patterning a low-k dielectric film, the method comprising:
forming and patterning a photoresist layer above a low-k dielectric layer to form exposed portions of the low-k dielectric layer, the low-k dielectric layer disposed above a substrate;
forming trenches in the exposed portions of the low-k dielectric layer; and
performing a plurality of process cycles to remove the photoresist layer, each process cycle comprising:
forming a silicon so…

Assignees

• Zhou Yifeng
• Nemani Srinivas D
• Doan Khoi
• Pender Jeremiah T P
• Applied Materials Inc

Inventors

• Zhou Yifeng
• Nemani Srinivas D
• Doan Khoi
• Pender Jeremiah T P

Classifications

• H10P14/6922

  Electricity · mapped topic

• H10P14/665

  Electricity · mapped topic

• H10P95/00

  Electricity · mapped topic

• H10W20/0765

  Electricity · mapped topic

• H10W20/096

  Electricity · mapped topic