Static random access memory structures

Patent metadata

Field	Value
Publication number	US-8976576-B2
Application number	US-201314057294-A
Country	US
Kind code	B2
Filing date	Oct 18, 2013
Priority date	May 21, 2013
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

A static random access memory structure is provided. The static random access memory structure includes a storage region having a first storage node and a second storage node which is complementary to the first storage node. The static random access memory structure also includes a reading region having a first reading transfer gate and a second reading transfer gate, and a reading word line electrically connecting with the gate of the first reading transfer gate and the gate of the second reading transfer gate. Further, the static random access memory structure includes a writing region independent of the reading region having a first writing transfer gate and a second writing transfer gate and a writing word line electrically connecting with the gate of the first writing transfer gate and the gate of the second transfer gate.

First claim

What is claimed is:

1. A static random access memory structure, comprising:
a storage region having a first storage node and a second storage node which is complementary to the first storage region;
a reading region having a first reading transfer gate and a second reading transfer gate; and
a writing region having a first writing transfer gate and a second writing transfer gate,
wherein:
a gate of the first reading transfer gate and a gate of the second reading transfer ga…

Assignees

• Semiconductor Mfg Int Shanghai

Inventors

• Chen Jinming
• Huang Stella

Classifications

• G11C11/419

  Physics · mapped topic

• G11C8/16 Primary

  Physics · mapped topic

• G11C5/06

  Physics · mapped topic

• G11C7/12

  Physics · mapped topic

• G11C11/412

  Physics · mapped topic