Manufacture of a CdHgTe multispectral photodiode array by cadmium diffusion
US-10079263-B2 · Sep 18, 2018 · US
Avalanche photodiode-type semiconductor structure with low response time and process for producing such a structure
US8975718B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975718-B2 |
| Application number | US-201314143425-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 30, 2013 |
| Priority date | Dec 31, 2012 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Abstract
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The invention relates to an avalanche photodiode-type semiconductor structure ( 1 ) intended to receive electromagnetic radiation in a given wavelength. The structure comprises a first semiconductor zone ( 210 ) with a first type of conductivity with a first longitudinal face ( 201 ), said first zone ( 210 ) being made of mercury-cadmium telluride of the Cd x Hg 1-x Te type with a cadmium proportion x that is varied. The structure ( 1 ) also comprises at least one second semiconductor zone ( 310 ) in contact with the first zone ( 210 ), and a third semiconductor zone ( 410 ) in contact with the second zone ( 310 ). The first zone ( 210 ) comprises a doping element, such as arsenic, of which the concentration is varied alternately in a direction substantially perpendicular to the first longitudinal face ( 201 ) between a so-called low concentration and a so-called high concentration. The invention also relates to a process for producing a structure ( 1 ) according to the invention.
First claim
Opening claim text (preview).
The invention claimed is: 1. An avalanche photodiode-type semiconductor structure configured to receive electromagnetic radiation in a given wavelength and comprising: a first semiconductor zone, called an absorption zone, with a first type of conductivity having a first longitudinal face intended to receive the electromagnetic radiation and a second face opposite the first face, said first zone being made of mercury-cadmium telluride of the Cd x Hg 1-x Te type with a cadmium prop…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10F30/2212Primary
Electricity · mapped topic
Electricity · mapped topic
- H10F77/1237Primary
Electricity · mapped topic
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- What does patent US8975718B2 cover?
- The invention relates to an avalanche photodiode-type semiconductor structure ( 1 ) intended to receive electromagnetic radiation in a given wavelength. The structure comprises a first semiconductor zone ( 210 ) with a first type of conductivity with a first longitudinal face ( 201 ), said first zone ( 210 ) being made of mercury-cadmium telluride of the Cd x Hg 1-x Te type with a cadmium propo…
- Who is the assignee on this patent?
- Commissariat Energie Atomique, Commissariat Energie Atomique
- What technology area does this patent fall under?
- Primary CPC classification H10F30/2212. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).