Substrate with conductive film
US-2017330913-A1 · Nov 16, 2017 · US
Manufacture of a CdHgTe multispectral photodiode array by cadmium diffusion
US10079263B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10079263-B2 |
| Application number | US-201615289577-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 10, 2016 |
| Priority date | Oct 12, 2015 |
| Publication date | Sep 18, 2018 |
| Grant date | Sep 18, 2018 |
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Abstract
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A method for manufacturing a multi-spectral photodiode array in a Cd x Hg 1-x Te semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and inter-diffusion annealing, realizing the diffusion of cadmium atoms from the cadmium-rich structure to the semiconductor layer. Pixels that do not all have the same cutoff wavelength are thereby obtained.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a multispectral photodiode array in a Cd x Hg 1-x Te semiconductor layer constituted of juxtaposed regions called pixels, the method comprising a step of producing a PN junction in each pixel, wherein the following steps are implemented at least once: deposition of cadmium-rich material on the Cd x Hg 1-x Te semiconductor layer so as to produce a cadmium-rich structure comprising separate portions on the Cd x Hg 1-x Te semico…
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Electricity · mapped topic
- H01L27/14696Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US10079263B2 cover?
- A method for manufacturing a multi-spectral photodiode array in a Cd x Hg 1-x Te semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be…
- Who is the assignee on this patent?
- Commissariat Energie Atomique
- What technology area does this patent fall under?
- Primary CPC classification H01L27/14696. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 18 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).