Hot-carrier injection programmable memory and method of programming such a memory
US-9224482-B2 · Dec 29, 2015 · US
Semiconductor device including a floating gate
US8975686B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975686-B2 |
| Application number | US-201414201233-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 7, 2014 |
| Priority date | May 23, 2008 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device includes a semiconductor layer with a trench dug downward from its surface, a source region formed on a surface layer portion adjacent to a first side of the trench in a prescribed direction, a drain region formed on the surface layer portion, adjacent to a second side of the trench opposite to the first side in the prescribed direction, a first insulating film on the bottom surface and the side surface of the trench, a floating gate stacked on the first insulating film and opposed to the bottom surface and the side surface of the trench through the first insulating film, a second insulating film formed on the floating gate, and a control gate at least partially embedded in the trench so that the portion embedded in the trench is opposed to the floating gate through the second insulating film.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor layer having a surface; a trench extending downward from the surface of the semiconductor layer, the trench having a first side, a second side opposite the first side, and a bottom; a source region formed on a surface layer portion of the semiconductor layer adjacently to the first side of the trench in a prescribed direction; a drain region formed on the surface layer portion of the semiconductor laye…
Assignees
Inventors
Classifications
- H10D30/6894Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D30/68Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8975686B2 cover?
- A semiconductor device includes a semiconductor layer with a trench dug downward from its surface, a source region formed on a surface layer portion adjacent to a first side of the trench in a prescribed direction, a drain region formed on the surface layer portion, adjacent to a second side of the trench opposite to the first side in the prescribed direction, a first insulating film on the bot…
- Who is the assignee on this patent?
- Rohm Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6894. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).