Integrated chip and manufacturing method therefor, and full-color integrated chip and display panel
US-12183868-B2 · Dec 31, 2024 · US
US8975652B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975652-B2 |
| Application number | US-201113876808-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 21, 2011 |
| Priority date | Sep 30, 2010 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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A light emitting diode (LED) structure, a LED device and methods for forming the same are provided. The LED structure comprises a LED wafer; and a phosphor layer having a flat surface and formed above a light emitting surface of the LED wafer, in which the phosphor layer is formed by centrifugal spin coating.
Opening claim text (preview).
What is claimed is: 1. An LED structure, comprising: an LED wafer; a transparent accommodating layer directly formed on a light emitting surface of the LED wafer, wherein the transparent accommodating layer is conductive and has a recess; and a phosphor layer having a flat surface and formed in recess of the transparent accommodating layer, wherein the phosphor layer is formed by centrifugal spin coating. 2. The LED structure according to claim 1 , furth…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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