Silicon carbide single-crystal substrate and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-8975643-B2
Application number	US-201313782222-A
Country	US
Kind code	B2
Filing date	Mar 1, 2013
Priority date	Apr 10, 2012
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

A silicon carbide single-crystal substrate includes a first surface, a second surface opposite to the first surface, and a peripheral edge portion sandwiched between the first surface and the second surface. A plurality of grinding traces are formed in a surface of the peripheral edge portion. A chamfer width as a distance from an outermost peripheral end portion of the peripheral edge portion to one of the plurality of grinding traces which is located on an innermost peripheral side of the peripheral edge portion in a direction parallel to the first surface is not less than 50 μm and not more than 400 μm. Thereby, a silicon carbide single-crystal substrate capable of suppressing occurrence of a crack, and a method for manufacturing the same can be provided.

First claim

What is claimed is:

1. A silicon carbide single-crystal substrate, comprising:
a first surface;
a second surface opposite to said first surface; and
a peripheral edge portion sandwiched between said first surface and said second surface,
a plurality of grinding traces being formed in a surface of said peripheral edge portion,
a chamfer width as a distance from an outermost peripheral end portion of said peripheral edge portion to one of said plurality of grinding traces wh…

Assignees

• Sumitomo Electric Industries

Inventors

• Okita Kyoko
• Ishibashi Keiji

Classifications

• H10W42/121

  Electricity · mapped topic

• B24D3/06

  Operations & Transport · mapped topic

• B24B9/065 Primary

  Operations & Transport · mapped topic

• H10D62/8325

  Electricity · mapped topic

• H10D62/40

  Electricity · mapped topic