Flexible semiconductor device

Patent metadata

Field	Value
Publication number	US-8975626-B2
Application number	US-86320209-A
Country	US
Kind code	B2
Filing date	Nov 13, 2009
Priority date	Nov 18, 2008
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.

First claim

The invention claimed is:

1. A flexible semiconductor device comprising:
a metal layer comprising a gate electrode, a source electrode and a drain electrode;
a metal oxide film, wherein the metal oxide film is an oxidized portion of a surface region of the metal layer;
a semiconductor layer formed above the gate electrode via the metal oxide film; and
a first extraction electrode and a second extraction electrode,
wherein the first extraction electrode is arranged on the metal oxide film such that the metal oxide film is sandwiched between the first extraction electrode and the source electrode, and the second extraction electrode is arranged on the metal oxide film such that the metal oxide film is sandwiched between the second extraction electrode and the drain electrode,
wherein uncovered portions are locally formed in the surface region of the metal layer such that each of the uncovered portions of the surface region of the metal layer is not covered with the metal oxide film,
wherein, via the uncovered portions, the source electrode and the semiconductor layer are electrically interconnected, and also the drain electrode and the semiconductor layer are electrically interconnected,
wherein the metal layer, from which the gate, source and drain electrodes are provided, is made of a metal foil,
wherein each of the uncovered portions of the metal foil serves as an interlayer connecting portion, and a part of the oxidized portion of the metal foil is a gate insulating film,
wherein the metal layer comprises a first metal layer and a second metal layer,
wherein the first metal layer comprises a valve metal and the second metal layer comprises a metal other than the valve metal,
wherein the metal oxide film is an anodic oxide film made from the valve metal,
wherein the metal oxide film is an oxidized portion of a surface region of only the first metal layer, and
wherein the oxidized portion of the surface region of the first metal layer includes an upper surface and side surfaces of the first metal layer.

2. The flexible semiconductor device according to claim 1 , wherein the first and second extraction electrodes electrically interconnect between the semiconductor layer and each of the uncovered portions, the first and second extraction electrodes being positioned on the metal oxide film provided at the surface region of the metal foil.

3. The flexible semiconductor device according to claim 2 , wherein the gate, source and drain electrodes which are made of the metal foil are positioned such that the gate, source and drain electrodes are all flush with each other.

4. The flexible semiconductor device according to claim 3 , wherein each of the gate electrode, the source electrode and the drain electrode has a tapered form in the direction of thickness thereof.

5. The flexible semiconductor device according to claim 1 , wherein an interlayer is formed between the first metal layer and the second metal layer.

6. The flexible semiconductor device according to claim 1 , wherein the first and second extraction electrodes electrically interconnect between the semiconductor layer and each of the uncovered portions.

7. The flexible semiconductor device according to claim 1 , wherein a part of the metal oxide film, which part is sandwiched between the gate electrode and the semiconductor layer, functions as a gate insulating film.

8. The flexible semiconductor device according to claim 7 , further comprising a plurality of transistor structures, each of which comprises the semiconductor layer, the gate insulating film, the gate electrode, the source electrode and the drain electrode.

9. The flexible semiconductor device according to claim 8 , further comprising a capacitor, wherein an electrode layer of the capacitor is formed of the metal layer and a dielectric layer of the capacitor is formed of the metal oxide film.

10. The flexible semiconductor device according to claim 9 , wherein the flexible semiconductor device is a semiconductor device used for an image display device,
wherein a drive circuit of the image display device comprises the transistor structure and the capacitor of the flexible semiconductor device, and
wherein the metal oxide film is formed in a continuous arrangement in the region that contains the transistor structure and the capacitor.

11. The flexible semiconductor device according to claim 1 , wherein the source electrode, the drain electrode and the gate electrode are flush with each other.

12. The flexible semiconductor device according to claim 1 , wherein the first extraction electrode is arranged on the metal oxide film such that the metal oxide film is sandwiched between the first extraction electrode and the gate electrode, and the second extraction electrode is arranged on the metal oxide film such that the metal oxide film is sandwiched between the second extraction electrode and the gate electrode.

Assignees

• Suzuki Takeshi
• Hotehama Kenichi
• Hirano Koichi
• Nakatani Seiichi
• Panasonic Ip Man Co Ltd

Inventors

• Suzuki Takeshi
• Hotehama Kenichi
• Hirano Koichi
• Nakatani Seiichi

Classifications

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/675

  Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium · CPC title

• H10D30/6758

  characterised by the insulating substrates · CPC title

• H10D30/0316

  of lateral bottom-gate TFTs comprising only a single gate · CPC title

• H10D30/031 Primary

  of thin-film transistors [TFT] · CPC title