Semiconductor die, semiconductor package and substrate dicing method
US-2024421000-A1 · Dec 19, 2024 · US
US8975162B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975162-B2 |
| Application number | US-201314095824-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 3, 2013 |
| Priority date | Dec 20, 2012 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Official abstract text for this publication.
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside. The dicing tape is removed from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape. Alternatively, if no die attach film is initially disposed between the wafer backside and the dicing tape, a die attach film is applied to the wafer backside at this operation. A water soluble mask is applied to the wafer backside. Laser scribing is performed on the wafer backside to cut through the mask, the die attach film and the wafer, including all layers included within the front side and backside of the wafer. A plasma etch is performed to treat or clean surfaces of the wafer exposed by the laser scribing. A wafer backside cleaning is performed and a second dicing tape is applied to the wafer backside. The protection tape is the removed from the wafer front side.
Opening claim text (preview).
What is claimed is: 1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising: applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside; removing the dicing tape from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape; and, subsequently, applying a mask to the wafer backside; and, subsequently, laser scribing from t…
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