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Method and circuit for switching a memristive device in an array
US8971091B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8971091-B2 |
| Application number | US-201113884140-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 31, 2011 |
| Priority date | Nov 19, 2010 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
Official abstract text for this publication.
A method of switching a memristive device in a two-dimensional array senses a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device. A leakage compensation current is generated according to the sensed leakage current, and a switching current ramp is also generated. The leakage compensation current and the switching current ramp are combined to form a combined switching current, which is applied to the row line of the memristive device. When a resistance of the memristive device reaches a target value, the combined switching current is removed from the row line.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of switching a memristive device in a two-dimensional array, comprising: sensing a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device; generating a leakage compensation current according to the sensed leakage current; generating a switching current ramp; combining the leakage compensation current and the switching current ramp to form a combined swit…
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Electricity · mapped topic
Electricity · mapped topic
- G11C13/0069Primary
Physics · mapped topic
Electricity · mapped topic
Physics · mapped topic
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- What does patent US8971091B2 cover?
- A method of switching a memristive device in a two-dimensional array senses a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device. A leakage compensation current is generated according to the sensed leakage current, and a switching current ramp is also generated. The leakage compensation current and th…
- Who is the assignee on this patent?
- Yi Wei, Qureshi Muhammad Shakeel, Perner Frederick, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G11C13/0069. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).