Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
US8970050B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8970050-B2 |
| Application number | US-201213728549-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 27, 2012 |
| Priority date | Aug 17, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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A semiconductor memory device includes a first chip and a second chip connected to the first chip physically and electrically, wherein the first chip and the second chip are coupled by through silicon vias (TSVs) formed in a first region, and the first chip and the second chip are coupled by alignment keys formed in second regions.
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What is claimed is: 1. A semiconductor memory device comprising: a first semiconductor chip including a first region and a second region wherein the second region is positioned in an edge of the first semiconductor chip; a second semiconductor chip including a third region corresponding to the first region and a fourth region, wherein the fourth region is positioned in an edge of the second semiconductor chip which corresponds to the second region, and stacked on top of the firs…
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