Method of manufacturing a semiconductor package having conductive pillars
US-2024387343-A1 · Nov 21, 2024 · US
US8970001B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8970001-B2 |
| Application number | US-201213729389-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 28, 2012 |
| Priority date | Dec 28, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Official abstract text for this publication.
A structure includes a metal feature, and a passivation layer having a portion overlapping the metal feature. The passivation layer includes a non-low-k dielectric material. A polymer layer is over the passivation layer. A Post-Passivation Interconnect (PPI) extends into the polymer layer to electrically couple to the metal feature. A guard ring includes a second PPI, wherein the guard ring is electrically grounded. The second PPI substantially encircles the first PPI.
Opening claim text (preview).
What is claimed is: 1. A structure comprising: a first metal feature; a passivation layer comprising a portion overlapping the first metal feature, wherein the passivation layer comprises a non-low-k dielectric material; a first polymer layer over the passivation layer; a first Post-Passivation Interconnect (PPI) extending into the first polymer layer to electrically couple to the first metal feature; a guard ring comprising a second PPI, wherein the guard ring is electric…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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