Top notch slit profile for mems device
US-2024381034-A1 · Nov 14, 2024 · US
US8969979B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969979-B2 |
| Application number | US-201314132328-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 18, 2013 |
| Priority date | Dec 2, 2011 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Official abstract text for this publication.
A method includes forming a Micro-Electro-Mechanical System (MEMS) device on a front surface of a substrate. After the step of forming the MEMS device, a through-opening is formed in the substrate, wherein the through-opening is formed from a backside of the substrate. The through-opening is filled with a dielectric material, which insulates a first portion of the substrate from a second portion of the substrate. An electrical connection is formed on the backside of the substrate. The electrical connection is electrically coupled to the MEMS device through the first portion of the substrate.
Opening claim text (preview).
What is claimed is: 1. A device comprising: a substrate; a Micro-Electro-Mechanical System (MEMS) device on a front surface of the substrate; a dielectric material penetrating through the substrate, wherein the dielectric material forms a ring, wherein an entirety of the ring is formed of a homogeneous material, and wherein the ring separates the substrate into: a first portion encircled by the ring; and a second portion outside of the ring, wherein the first portion is ele…
Electricity · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Operations & Transport · mapped topic
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