Fin-last replacement metal gate FinFET

Patent metadata

Field	Value
Publication number	US-8969965-B2
Application number	US-201414149295-A
Country	US
Kind code	B2
Filing date	Jan 7, 2014
Priority date	Jun 10, 2011
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

FinFET devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a FET device includes the following steps. A wafer is provided having an active layer on an insulator. A plurality of fin hardmasks are patterned on the active layer. A dummy gate is placed over a central portion of the fin hardmasks. One or more doping agents are implanted into source and drain regions of the device. A dielectric filler layer is deposited around the dummy gate. The dummy gate is removed to form a trench in the dielectric filler layer. The fin hardmasks are used to etch a plurality of fins in the active layer within the trench. The doping agents are activated. A replacement gate is formed in the trench, wherein the step of activating the doping agents is performed before the step of forming the replacement gate.

First claim

What is claimed is:

1. A field effect transistor device, comprising:
a source region;
a drain region;
a plurality of fins connecting the source region and the drain region, wherein the fins serve as a channel region of the device, and wherein the fins have a pitch of from about 20 nm to about 200 nm and each of the fins has a width of from about 2 nm to about 40 nm;
a metal gate which at least partially surrounds each of the fins, wherein the source and the drain regions are…

Assignees

• IBM

Inventors

• Chang Josephine B
• Guillorn Michael A
• Haensch Wilfried Ernst-August

Classifications

• H10D30/62 Primary

  Electricity · mapped topic

• H10D30/024

  Electricity · mapped topic

• H10D64/017 Primary

  Electricity · mapped topic

• H10D62/292

  Electricity · mapped topic

• H01L29/785 Primary

  Electricity · mapped topic