LDMOS one-time programmable device

Patent metadata

Field	Value
Publication number	US-8969957-B2
Application number	US-201313945739-A
Country	US
Kind code	B2
Filing date	Jul 18, 2013
Priority date	Oct 4, 2011
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

According to one embodiment, a one-time programmable (OTP) device having a lateral diffused metal-oxide-semiconductor (LDMOS) structure comprises a pass gate including a pass gate electrode and a pass gate dielectric, and a programming gate including a programming gate electrode and a programming gate dielectric. The programming gate is spaced from the pass gate by a drain extension region of the LDMOS structure. The LDMOS structure provides protection for the pass gate when a programming voltage for rupturing the programming gate dielectric is applied to the programming gate electrode. A method for producing such an OTP device comprises forming a drain extension region, fabricating a pass gate over a first portion of the drain extension region, and fabricating a programming gate over a second portion of the drain extension region.

First claim

The invention claimed is:

1. A one-time programmable (OTP) device comprising:
a lateral diffused metal-oxide-semiconductor (LDMOS) structure having a drain extension region;
a pass gate including a pass gate electrode and a pass gate dielectric; and
a programming gate including a programming gate electrode and a programming gate dielectric situated on said drain extension region, said programming gate being spaced from said pass gate by said drain extension region, wherein
t…

Assignees

• Broadcom Corp

Inventors

• Ito Akira
• Chen Xiangdong

Classifications

• H10W20/491 Primary

  Electricity · mapped topic

• H10W10/17

  Electricity · mapped topic

• H10W10/014

  Electricity · mapped topic

• H10D64/691

  Electricity · mapped topic

• H10D64/667

  Electricity · mapped topic