Methods of forming a finfet semiconductor device with undoped fins

Patent metadata

Field	Value
Publication number	US-8969932-B2
Application number	US-201213711779-A
Country	US
Kind code	B2
Filing date	Dec 12, 2012
Priority date	Dec 12, 2012
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

One method disclosed herein includes, prior to forming an isolation region in a semiconducting substrate for the device, forming a doped well region and a doped punch-stop region in the substrate, introducing a dopant material that is adapted to retard diffusion of boron or phosphorous into the substrate to form a dopant-containing layer proximate an upper surface of the substrate, performing an epitaxial deposition process to form an undoped semiconducting material above the dopant-containing layer, forming a plurality of spaced-apart trenches that extend at least partially into the substrate, wherein the trenches define a fin for the device comprised of at least the undoped semiconducting material, forming at least a local isolation insulating material in the trenches, and forming a gate structure around at least the undoped semiconducting material, wherein a bottom of a gate electrode is positioned approximately level with or below a bottom of the undoped semiconducting material.

First claim

What is claimed:

1. A method of forming a device in and above a semiconducting substrate, comprising:
prior to forming an isolation region in said substrate for said device, forming a doped well region and a doped punch-stop region in said substrate;
introducing dopant material into said substrate to form a dopant-containing layer proximate an upper surface of said substrate, wherein said dopant material is adapted to retard diffusion of boron or phosphorous;
performing an epi…

Assignees

• Globalfoundries Inc

Inventors

• Wei Andy C
• Sehgal Akshey
• Kim Seung Y
• Tang Teck Jung
• Tambwe Francis M

Classifications

• H10D84/834

  Electricity · mapped topic

• H10D30/0241

  Electricity · mapped topic

• H10D30/62

  Electricity · mapped topic

• H10D30/024 Primary

  Electricity · mapped topic

• H10D62/371 Primary

  Electricity · mapped topic