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US8969926B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969926-B2 |
| Application number | US-201213675694-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 13, 2012 |
| Priority date | Dec 9, 2011 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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An embodiment of a vertical power device includes a III-nitride substrate, a drift region coupled to the III-nitride substrate and comprising a III-nitride material of a first conductivity type, and a channel region coupled to the drift region and comprising a III-nitride material of the first conductivity type. The vertical power device also includes a source region coupled to the channel region and comprising a III-nitride material of the first conductivity type, and a gate region coupled to the channel region. The gate region includes a III-nitride material of a second conductivity type. The vertical power device further includes a source-coupled region coupled to the drift region and electrically connected with the source region. The source-coupled region includes a III-nitride material of the second conductivity type.
First claim
Opening claim text (preview).
What is claimed is: 1. A vertical power device comprising: a III-nitride substrate; a III-nitride drift region coupled to the III-nitride substrate and having a first conductivity type; a III-nitride channel region coupled to the III-nitride drift region and having the first conductivity type; a III-nitride source region coupled to the III-nitride channel region and having the first conductivity type; a III-nitride gate region coupled to the III-nitride channel region, whe…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/015Primary
Electricity · mapped topic
- H10D30/0515Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969926B2 cover?
- An embodiment of a vertical power device includes a III-nitride substrate, a drift region coupled to the III-nitride substrate and comprising a III-nitride material of a first conductivity type, and a channel region coupled to the drift region and comprising a III-nitride material of the first conductivity type. The vertical power device also includes a source region coupled to the channel regi…
- Who is the assignee on this patent?
- Avogy Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D30/015. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).