Semiconductor device and method for forming the same
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Field effect transistors and method of forming the same
US8969922B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969922-B2 |
| Application number | US-201213368960-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 8, 2012 |
| Priority date | Feb 8, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
Official abstract text for this publication.
A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including a first device disposed in a first device region, the first device including a first gate structure, first gate spacers formed on the sidewalls of the first gate structure, and first source and drain features and a second device disposed in a second device region, the second device including a second gate structure, second gate spacers formed on the sidewalls of the second gate structure, and second source and drain features. The semiconductor device further includes a contact etch stop layer (CESL) disposed on the first and second gate spacers and interconnect structures disposed on the first and second source and drain features. The interconnect structures are in electrical contact with the first and second source and drain features and in contact with the CESL.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor substrate including a first device region, a second device region, a third device region, a region between the first and second device regions, and a shallow trench isolation (STI) feature between the second and third device regions; a first device of a first type disposed in the first device region, the first device of the first type including a first gate structure, first gate spacers formed on the sidew…
Assignees
Inventors
Classifications
- H10W20/0698Primary
Electricity · mapped topic
- H10W20/069Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969922B2 cover?
- A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including a first device disposed in a first device region, the first device including a first gate structure, first gate spacers formed on the sidewalls of the first gate structure, and first source and drain features and a second device di…
- Who is the assignee on this patent?
- Liu Chia-Chu, Chen Kuei Shun, Chiang Mu-Chi, and 6 more
- What technology area does this patent fall under?
- Primary CPC classification H10W20/0698. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).