Semiconductor device including image sensor and method of forming the same
US-2024379711-A1 · Nov 14, 2024 · US
Solid state image pickup device and method of producing solid state image pickup device
US8969879B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969879-B2 |
| Application number | US-201113064787-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 15, 2011 |
| Priority date | Mar 19, 2002 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
First claim
Opening claim text (preview).
We claim: 1. A solid state image pickup device comprising: a photo-electric conversion device configured to convert a spectrum of incident light into a signal charge, said photo-electric conversion region being in a pixel region of a semiconductor substrate; a light-shielding film configured to inhibit transmission of said incident light onto said semiconductor substrate, an opening through the light-shielding film being between a micro-lens and said photo-electric conversion de…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8969879B2 cover?
- Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and r…
- Who is the assignee on this patent?
- Abe Takashi, Nakamura Nobuo, Mabuchi Keiji, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification H10F39/18. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).