Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof
US-2015372148-A1 · Dec 24, 2015 · US
Semiconductor film composition
US8969865B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969865-B2 |
| Application number | US-9786906-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 31, 2006 |
| Priority date | Oct 12, 2005 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor film composition, comprising: an oxide semiconductor material; and at least one polyatomic ion incorporated into the oxide semiconductor material as a replacement ion for an anion entity or a cation entity of an analog of the oxide semiconductor material, wherein the analog is the oxide semiconductor material with the anion entity or the cation entity and without the polyatomic ion; wherein the semiconductor film composition is SnO 1.7 (PO 4 ) 0.2 , indium tin oxide sulfate or indium tin oxide phosphate. 2. The semiconductor film composition as defined in claim 1 wherein the at least one polyatomic ion is selected from sulfates, borates, phosphates, tungstates, silicates, and combinations thereof. 3. The semiconductor film composition as defined in claim 1 wherein a liquid precursor of the semiconductor film composition is adapted to substantially inhibit crystallization during processing. 4. The semiconductor film composition as defined in claim 1 wherein the polyatomic ion is an anion or a cation. 5. The semiconductor film composition as defined in claim 1 wherein: the anion entity of the analog of the oxide semiconductor material is an O 2− anion; and the polyatomic ion is a phosphate or a sulfate. 6. The semiconductor film composition as defined in claim 1 wherein the semiconductor film composition is substantially amorphous. 7. A semiconductor film composition, comprising: an oxide semiconductor material; and at least one polyatomic ion incorporated into the oxide semiconductor material as a replacement ion for an anion entity or a cation entity of an analog of the oxide semiconductor material, wherein the analog is the oxide semiconductor material with the anion entity or the cation entity and without the polyatomic ion; wherein the semiconductor film composition is SnO 1.7 (PO 4 ) 0.2 and the analog is SnO 2 .
Assignees
Inventors
Classifications
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
Oxides · CPC title
- H10P14/265Primary
using solutions · CPC title
Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title
- H01L21/02628Primary
Electricity · mapped topic
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- What does patent US8969865B2 cover?
- A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
- Who is the assignee on this patent?
- Herman Gregory, Punsalan David, Hoffman Randy, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/265. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).