Method for producing an optoelectronic assembly, and optoelectronic assembly
US-2015372062-A1 · Dec 24, 2015 · US
US8969864B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969864-B2 |
| Application number | US-201314052353-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 11, 2013 |
| Priority date | May 30, 2013 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Disclosed is an organic light emitting diode device including an anode, a cathode, an emission layer between the anode and the cathode, and a buffer layer positioned between the emission layer and the anode. The buffer layer includes an oxide, fluoride, quinolate, or acetoacetate compound of an alkaline metal or an alkaline-earth metal, as well as a material having a work function of about 2.6 to about 4.5 eV. The buffer layer also has a thickness of about 30 Å to about 400 Å.
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What is claimed is: 1. An organic light emitting diode device, comprising an anode, a cathode, an emission layer between the anode and the cathode, and a buffer layer positioned between the emission layer and the anode, the buffer layer comprising a first material that is an oxide, fluoride, quinolate, or acetoacetate of an alkaline metal or an alkaline-earth metal, the buffer layer further comprising a second material having a work function in a range from about 2.6 to abou…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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