Manufacturing method of light-emitting device with nano-imprinting wiring

Patent metadata

Field	Value
Publication number	US-9196869-B2
Application number	US-201313796703-A
Country	US
Kind code	B2
Filing date	Mar 12, 2013
Priority date	Mar 16, 2012
Publication date	Nov 24, 2015
Grant date	Nov 24, 2015

Abstract

Provided is a light-emitting device in which a voltage drop is suppressed and light extraction efficiency is increased. Provided is a light-emitting device with increased productivity. Provided is a light-emitting device with high reliability. An extremely thin conductive film from 3 nm to 50 nm is used as an electrode on a light-emitting side and an auxiliary wiring is provided in contact with the electrode. When the width of the auxiliary wiring is 100 μm or less, the auxiliary wiring is hardly perceived with the naked eye, so that a light-emitting device in which light extraction efficiency is increased and luminance is obtained uniformly. The extremely thin auxiliary wiring can be formed by nanoimprinting technology. With use of nanoimprinting technology, the width of the auxiliary wiring can be reduced to 10 nm or less.

First claim

What is claimed is:

1. A method for manufacturing a light-emitting device, comprising the steps of:
forming a first auxiliary wiring over an insulating surface;
forming a first electrode layer over and in contact with the first auxiliary wiring;
forming a layer containing a light-emitting organic compound over the first electrode layer;
forming a second electrode layer over the layer;
forming a second auxiliary wiring over and in contact with the second electrode layer; an…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10K59/80522

  Electricity · mapped topic

• H10K59/80521

  Electricity · mapped topic

• H10K59/80516

  Electricity · mapped topic

• H10K59/80515

  Electricity · mapped topic

• H10K50/856

  Electricity · mapped topic