Memory Cells and Methods of Forming Memory Cells
US-2015380645-A1 · Dec 31, 2015 · US
US8969846B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969846-B2 |
| Application number | US-201414330951-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 14, 2014 |
| Priority date | Sep 22, 2011 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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A variable resistance memory according to the present embodiment includes a memory cell including an ion source electrode including metal atoms, an opposite electrode, an amorphous silicon film formed between the ion source electrode and the opposite electrode, and a polysilicon film formed between the amorphous silicon film and the ion source electrode.
Opening claim text (preview).
What is claimed is: 1. A variable resistance memory, comprising a memory cell including: an ion source electrode including metal atoms; an opposite electrode; and a variable resistance film provided between the ion source electrode and the opposite electrode, and comprising a first film and a second film, the first film being provided between the ion source electrode and the second film, the first film having a crystal grain boundary and the second film being amorphous, and…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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