Memory cells having storage elements that share material layers with steering elements and methods of forming the same

Patent metadata

Field	Value
Publication number	US-8969845-B2
Application number	US-201414299240-A
Country	US
Kind code	B2
Filing date	Jun 9, 2014
Priority date	Oct 14, 2010
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The steering element includes a diode having an n-region and a p-region. The metal-insulator-metal stack includes a reversible resistivity-switching material between a top electrode and a bottom electrode, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer disposed between the metal-insulator-metal stack and the conductor. The bottom electrode includes the n-region or the p-region of the diode, and the reversible resistivity-switching material is directly adjacent the n-region or the p-region of the diode. Numerous other aspects are provided.

First claim

The invention claimed is:

1. A memory cell comprising:
a steering element comprising a diode having an n-region and a p-region;
a metal-insulator-metal (“MIM”) stack coupled in series with the steering element, wherein the MIM stack comprises a reversible resistivity-switching (“RRS”) material disposed between a top electrode and a bottom electrode, and the top electrode comprises a highly doped semiconductor material; and
a conductor disposed above the MIM stack,
wherein th…

Assignees

• Sandisk 3D Llc

Inventors

• Chen Yung-Tin
• Pan Chuanbin
• Mihnea Andrei
• Maxwell Steven
• Hou Kun

Classifications

• H01L27/2481

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L45/08

  Electricity · mapped topic

• H01L45/12

  Electricity · mapped topic

• H01L45/1616

  Electricity · mapped topic