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US-12176178-B2 · Dec 24, 2024 · US
Method and apparatus for plasma processing
US8969211B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969211-B2 |
| Application number | US-201313960831-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 7, 2013 |
| Priority date | Apr 9, 2013 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.
First claim
Opening claim text (preview).
The invention claimed is: 1. A plasma processing method that uses a plasma processing apparatus comprising a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, said plasma processing method comprising the steps of: modulating the…
Assignees
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P50/242Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969211B2 cover?
- The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the …
- Who is the assignee on this patent?
- Hitachi High Tech Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P50/242. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).