Scanning ion beam deposition and etch
US-12176178-B2 · Dec 24, 2024 · US
Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
US8969210B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969210-B2 |
| Application number | US-201113232160-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 14, 2011 |
| Priority date | Sep 15, 2010 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12 ; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12 ; a bias power supply unit for supplying AC bias power to the supporting table 14 ; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.
First claim
Opening claim text (preview).
What is claimed is: 1. A plasma etching method for performing an etching process on a target substrate with generated plasma by using a plasma etching apparatus including a processing chamber configured to perform therein a plasma process on the target substrate; a gas supply unit configured to supply a plasma processing gas into the processing chamber; a supporting table positioned within the processing chamber and configured to support the target substrate thereon; a microwave ge…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P50/242Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969210B2 cover?
- There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12 ; a supporting table positioned within the processing chamber 12 and configured…
- Who is the assignee on this patent?
- Nozawa Toshihisa, Sasaki Masaru, Hashimoto Jun, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10P50/242. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).