Method for manufacturing a film on a support having a non-flat surface
US-12087615-B2 · Sep 10, 2024 · US
US8969178B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969178-B2 |
| Application number | US-201313743634-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 17, 2013 |
| Priority date | Sep 13, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate.
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What is claimed is: 1. A method of manufacturing a large area gallium nitride (GaN) substrate, the method comprising: forming a buffer layer on a silicon substrate; forming an insulation layer pattern on a rim of a top surface of the buffer layer; growing a GaN layer on the buffer layer, the GaN layer including a single crystal GaN layer adjacent to a side surface of the insulation layer pattern and a polycrystalline GaN layer on a top surface of the insulation layer pattern;…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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