Perovskite-type ceramic compact and method for manufacturing same
US-2024425384-A1 · Dec 26, 2024 · US
US8968603B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8968603-B2 |
| Application number | US-201113075911-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 30, 2011 |
| Priority date | May 12, 2010 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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A dielectric material is provided. The material includes Ca 1-x-y Ba x Sr y Ti 1 -z Cr z O 3-δ A p , wherein A is nitrogen, fluorine, or combinations thereof; x and y can vary between the value of zero and one such that 0<x<1 and 0<y<1; z can vary between the value of zero and 0.01 such that 0≦z≦0.01; and δ and p can vary between the value of zero and one such that 0≦δ≦1 and 0≦p≦1, with a proviso that z and p are not simultaneously zero. A dielectric component including the dielectric material and a system including the dielectric component are provided.
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The invention claimed is: 1. A material comprising: Ca 1-x-y Ba x Sr y Ti 1-z Cr z O 3-δ A p , in a bulk, polycrystalline form comprising grains and grain boundaries, wherein A is nitrogen, fluorine, or combinations thereof; 0<x<1; 0<y<1; 0≦z≦0.01; 0≦δ≦1; and 0≦p≦1, with a proviso that z and p are not simultaneously zero; and a metallic bismuth phase dispersed at the grain boundaries. 2. The material of claim 1 , wherein (x+y) is in the range from about 0.9 to about 1. 3. The material of claim 2 , wherein x is greater than or equal to 0.3, and (x+y) is equal to about 1. 4. The material of claim 3 , wherein z is greater than zero and less than or equal to 0.01, and (x+y) is equal to about 1. 5. The material of claim 4 , comprising Ba 0.3 Sr 0.7 Ti 0.995 Cr 0.005 O 3 . 6. The material of claim 4 , comprising Ba 0.4 Sr 0.6 Ti 0.998 Cr 0.002 O 3 . 7. The material of claim 1 , wherein δ is greater than zero and less than or equal to 0.5; and p is greater than zero and less than or equal to 0.4. 8. The material of claim 7 , comprising Ba 0.3 Sr 0.7 TiO 2.8 N 0.13 . 9. The material of claim 7 , comprising Ba 0.3 Sr 0.7 Ti 0.995 Cr 0.005 O 2.8 N 0.13 . 10. The material of claim 7 , comprising Ba 0.4 Sr 0.6 Ti 0.995 Cr 0.005 O 2.8 N 0.13 . 11. The material of claim 1 , comprising Ba 0.55 Sr 0.4 Ca 0.05 Ti 0.99 Cr 0.01 O 3 . 12. A dielectric component comprising: a material comprising Ca 1-x-y Ba x Sr y Ti 1-z Cr z O 3-δ A p in a bulk, polycrystalline form comprising grains and grain boundaries, wherein A is nitrogen, fluorine, or combinations thereof; 0<x<1; 0<y<1; 0≦z≦0.01; 0≦δ≦1; and 0≦p≦1, with a proviso that z and p are not simultaneously zero; and a metallic bismuth phase dispersed at the grain boundaries. 13. The dielectric component of claim 12 , wherein an amount of metallic bismuth is less than about 3 mole percent of the material. 14. The dielectric component of claim 12 , wherein density of the material is greater than about 96% of the theoretical density. 15. A system comprising: a dielectric component comprising a material comprising Ca 1-x-y Ba x Sr y Ti 1-z Cr z O 3-δ A p in a bulk, polycrystalline form comprising grains and grain boundaries, wherein A is nitrogen, fluorine, or combinations thereof; 0<x<1; 0<y<1; 0≦z≦0.01; 0≦δ≦1; and 0≦p≦1, with a proviso that z and p are not simultaneously zero; and a metallic bismuth phase dispersed at the grain boundaries.
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