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US-2024221813-A1 · Jul 4, 2024 · US
Non-volatile memory device using variable resistance element with an improved write performance
US8964488B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8964488-B2 |
| Application number | US-201213470617-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 14, 2012 |
| Priority date | Dec 14, 2007 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
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A non-volatile memory device using a variable resistive element is provided. The non-volatile memory device includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator configured to generate a first voltage, a voltage pad configured to receive an external voltage that has a level higher than the first voltage, a write driver configured to be supplied with the external voltage and configured to write data to the plurality of non-volatile memory cells selected from the memory cell array; a sense amplifier configured to be supplied with the external voltage and configured to read data from the plurality of non-volatile memory cells selected from the memory cell array, and a row decoder and a column decoder configured to select the plurality of non-volatile memory cells included in the memory cell array, the row decoder being supplied with the first voltage and the column decoder being supplied with the external voltage.
First claim
Opening claim text (preview).
Which is claimed is: 1. A non-volatile memory device comprising: a memory cell array including a plurality of non-volatile memory cells; a first voltage generator configured to generate a first voltage; a voltage pad configured to receive an external voltage that has a level higher than the first voltage; a write driver configured to be supplied with the external voltage and configured to write data to the plurality of non-volatile memory cells selected from the memory cell…
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Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
- G11C5/14Primary
Physics · mapped topic
Physics · mapped topic
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- What does patent US8964488B2 cover?
- A non-volatile memory device using a variable resistive element is provided. The non-volatile memory device includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator configured to generate a first voltage, a voltage pad configured to receive an external voltage that has a level higher than the first voltage, a write driver configured to be supplied …
- Who is the assignee on this patent?
- Kim Hye-Jin, Lee Kwang-Jin, Kim Du-Eung, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G11C5/14. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).