Compound semiconductor ESD protection devices

Patent metadata

Field	Value
Publication number	US-8964342-B2
Application number	US-201213732003-A
Country	US
Kind code	B2
Filing date	Dec 31, 2012
Priority date	Dec 31, 2012
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

The present invention relates to compound semiconductor ESD protection devices using plural compound semiconductor E-FETs or compound semiconductor multi-gate E-FETs. The device comprises plural compound semiconductor E-FETs or multi-gate E-FETs, in which each of the gates is DC-connected to the source, drain, or an inter-gate region between two adjacent gates in the multi-gate E-FET through at least one first resistor, and at least one of the gates is AC-connected to the source, drain, or an inter-gate region between two adjacent gates in the multi-gate E-FET through a gate capacitor.

First claim

What is claimed is:

1. A compound semiconductor electrostatic discharge (ESD) protection device, comprising:
a multi-gate enhancement-mode field effect transistor (E-FET), which comprises:
a source electrode;
a drain electrode; and

plural gate electrodes disposed between said source and drain electrodes;
at least one first resistor, through which each of said plural gate electrodes is DC-connected to said source electrode, said drain electrode, or an inter-gate region bet…

Assignees

• Win Semiconductors Corp

Inventors

• Takatani Shinichiro
• Chung Jung-Tao
• Wang Chi-Wei
• Yuan Cheng-Guan
• Liu Shih-Ming Joseph

Classifications

• H10D64/411

  Electricity · mapped topic

• H10D64/257

  Electricity · mapped topic

• H10D30/47

  Electricity · mapped topic

• H10D89/811 Primary

  Electricity · mapped topic

• H10D89/60 Primary

  Electricity · mapped topic