Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-8964085-B2
Application number	US-201313942428-A
Country	US
Kind code	B2
Filing date	Jul 15, 2013
Priority date	Mar 8, 2010
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a plurality of pixels arranged in a matrix, each of the plurality of pixels comprising:
a photodiode;
a signal charge accumulation portion;
a charge accumulation control transistor, wherein one of a source and a drain of the charge accumulation control transistor is electrically connected to the photodiode and the other of the source and the drain of the charge accumulation control transistor is electrically conn…

Assignees

• Semiconductor Energy Lab

Inventors

• Kurokawa Yoshiyuki
• Ikeda Takayuki
• Tamura Hikaru
• Kozuma Munehiro
• Ikeda Masataka
• Aoki Takeshi

Classifications

• H04N25/76

  Electricity · mapped topic

• H10F39/811

  Electricity · mapped topic

• H10D30/6755

  Electricity · mapped topic

• H10F39/18

  Electricity · mapped topic

• H10F39/802 Primary

  Electricity · mapped topic