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Dense chevron finFET and method of manufacturing same
US8963294B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963294-B2 |
| Application number | US-85780607-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2007 |
| Priority date | Sep 19, 2005 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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- Title
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Abstract
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A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material and longitudinal axes of the first and second fins aligned in the same crystal direction but offset from each other. The alignment procedure including simultaneously aligning alignment marks on a gate mask to alignment targets formed separately by a first masked used to define the first fin and a second mask used to define the second fin.
First claim
Opening claim text (preview).
What is claimed is: 1. A structure, comprising: an insulating layer formed on a top surface of a supporting substrate; single-crystal silicon first and second fins on a top surface of said insulating layer; single-crystal silicon first, second and third blocks on said top surface of said insulating layer, said second block between said first and third blocks, said first fin between and connecting said first block to said second block, said second fin between and connecting sai…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D86/011Primary
Electricity · mapped topic
- H01L21/845Primary
Electricity · mapped topic
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- What does patent US8963294B2 cover?
- A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material and longitudinal axes of the first and second fins aligned in the same crystal direction but offset…
- Who is the assignee on this patent?
- Beintner Jochen, Ludwig Thomas, Nowak Edward Joseph, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D86/011. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).